SSF6072G5 60v n-channel mosfet www.goodark.com page 1 of 7 rev.1.1 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 4 i d @ tc = 100c continuous drain current, v gs @ 10v 3 i dm pulsed drain current 16 a p d @tc = 25c power dissipation 3.3 w v ds drain-source voltage 60 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 15 mj i as avalanche current @ l=0.3mh 10 a t j t stg operating junction and storage temperature range -55 to +175 c thermal resistance symbol characteristics typ. max. units junction-to-ambient (t 10s) 38 /w r ja junction-to-ambient (pcb mounted, steady-state) 35 /w v dss 60v r ds (on) 67m (typ.) i d 4a sot-223 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for dc-dc and dc-ac converters, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in dc-dc and dc-ac converters and a wide variety of other applications . 6072 SSF6072G5 6072 SSF6072G5
SSF6072G5 60v n-channel mosfet www.goodark.com page 2 of 7 rev.1.1 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 v v gs = 0v, id = 250a 67 100 v gs =10v,i d = 1.5a r ds(on) static drain-to-source on-resistance 76 115 m v gs =5v,i d = 1.5a v gs(th) gate threshold voltage 1 2.5 v v ds = v gs , i d = 250a 1 v ds = 60v,v gs = 0v i dss drain-to-source leakage current 10 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v gfs forward transconductance 1 s v ds = 15 v i d = 1.5a q g total gate charge 12 q gs gate-to-source charge 3.5 q gd gate-to-drain("miller") charge 3.7 nc i d = 4a, v ds =40v, v gs =10v t d(on) turn-on delay time 9.2 t r rise time 16.7 t d(off) turn-off delay time 35.4 t f fall time 8.6 ns v gs =10v, vds=25v, r gen =50 i d = 1.2a, c iss input capacitance 582 c oss output capacitance 49 c rss reverse transfer capacitance 36 pf v gs = 0v v ds = 30v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 4 a i sm pulsed source current (body diode) 16 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.5 v i s =4a, v gs =0v
SSF6072G5 60v n-channel mosfet www.goodark.com page 3 of 7 rev.1.1 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to- ambient thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
SSF6072G5 60v n-channel mosfet www.goodark.com page 4 of 7 rev.1.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical capacitance vs. drain-to-source voltage figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
SSF6072G5 60v n-channel mosfet www.goodark.com page 5 of 7 rev.1.1 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6. maximum effective transient thermal impedance, junction-to-case
SSF6072G5 60v n-channel mosfet www.goodark.com page 6 of 7 rev.1.1 mechanical data sot-223 dimensions in millimeters (unit: mm) notes dimensions are inclusive of plating package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. dimension l is measured in gauge plane. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
SSF6072G5 60v n-channel mosfet www.goodark.com page 7 of 7 rev.1.1 ordering and marking information device marking: SSF6072G5 package (available) sot-223 operating temperature range c : -55 to 175oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box sot-223 2500pcs 2pcs 5000pcs 8pcs 40000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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